Stabilization of si photoanodes in aqueous electrolytes through surface alkyalation
AssigneeCalifornia Institute of Technology
InventorNATHAN LEWIS
Life of this patent
Estimating the term…
Abstract
A two-step chlorination/alkylation technique used to introduce alkyl groups, —CnH2n+1 (n=1-6), functionally onto single-crystal, (111)-oriented, n-type Si surfaces. H-terminated Si photoanodes were unstable under illumination in contact with an aqueous 0.35 M K4Fe(CN)6-0.05 MK3Fe(CN)6 electrolyte. Such electrodes displayed low open-circuit voltages and exhibited a pronounced time-dependent deterioration in their current density vs potential characteristics due to anodic oxidation. In contrast, Si surfaces functionalized with —CH3 and —C2H5 groups displayed significant improvements in stability while displaying excellent electrochemical properties when used as photoelectrodes in the aqueous Fe(CN)63−/4− electrolyte.
Claims20
A semiconductor device, comprising:
- a silicon surface;
- and
- an alkyl group in contact with the silicon surface,
- said silicon surface having a plurality of bonds between silicon on the surface and carbon of said alkyl group on said surface.
A method of forming a semiconductor device, comprising:
- obtaining a silicon surface;
- forming a halogen material onto said silicon surface;
- alkylating said halogen, such that an alkyl group remains attached to said surface in place of said halogen, and to form silicon/carbon bonds between said alkyl group and silicon on said silicon surface, to form a processed surface;
- and
- using said semiconductor device.
A method of forming a protected semiconductor, comprising:
- obtaining a silicon surface;
- and
- processing said silicon surface to improve its resistance to oxidation.
A method of forming a photoanode, comprising:
- obtaining a silicon surface;
- and processing said silicon surface to improve its resistance to oxidation during photosensitive operations.
Dependencies are inferred from the claim text.