Scanning probe based lithographic alignment
AssigneeHewlett-Packard Development Company, L.P.
InventorYong Chen
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Abstract
The lithographic process described herein involves aligning a patterned mold with respect to an alignment mark that is disposed on a substrate based upon interaction of a scanning probe with the alignment mark. By this method, the patterned mold may be aligned to an atomic accuracy (e.g., on the order of 10 nm or less), enabling nanometer-scale devices to be fabricated. A device formed by this lithographic method and a system for implementing this lithographic method with alignment also are described.
Claims21
A lithographic method, comprising:
- aligning a patterned mold with respect to an alignment mark disposed on a substrate based upon interaction of a scanning probe with the alignment mark.
A device formed by a lithographic method, comprising:
- aligning a patterned mold with respect to an alignment mark disposed on a substrate based upon detection of a tunneling current through the alignment mark.
A lithographic system, comprising:
- a controller configured to align a patterned mold with respect to an alignment mark disposed on a substrate based upon interaction of a scanning probe with the alignment mark.
A lithographic system, comprising:
- a mold having a patterned surface exposed for contact with and configured to be urged into a film disposed on a substrate to transfer a relief pattern to the film;
- and
- a probe configured to interact with a nearby alignment mark disposed on the substrate.
Dependencies are inferred from the claim text.