Processing apparatus, transferring apparatus and transferring method

A processing apparatus, comprising:

• a substrate container holding table that holds a substrate container that contains a plurality of target substrates;
• a transferring chamber, disposed adjacent to the substrate container holding table, that maintains an interior thereof at a predetermined pressure;
• at least two processing units, disposed around the transferring chamber, that process a target substrate at the predetermined pressure, and that are selected from a group consisting of a titanium nitride layer depositing unit, a tantalum nitride layer depositing unit, and a tungsten nitride layer depositing unit;
• at least two titanium layer depositing units, disposed around the transferring chamber, that process a target substrate at the predetermined pressure;
• at least two tungsten layer depositing units, disposed around the transferring chamber, that process a target substrate at the predetermined pressure;
• at least one pre-cleaning unit, disposed around the transferring chamber, that processes a target substrate at the predetermined pressure;
• and
• at least three transferring arms, disposed in the transferring chamber, that transfer a target substrate.

A processing apparatus, comprising:

• a substrate container holding table that holds a substrate container that contains a plurality of target substrates;
• a transferring chamber, disposed adjacent to the substrate container holding table, that maintains an interior thereof at a predetermined pressure;
• at least two units, disposed around the transferring chamber, that process a target substrate at the predetermined pressure, and that are selected from a group consisting of a tantalum nitride layer depositing unit, a titanium nitride layer depositing unit, and a tungsten nitride layer depositing unit;
• at least two tantalum layer depositing units, disposed around the transferring chamber, that process a target substrate at the predetermined pressure;
• at least two copper layer depositing units, disposed around the transferring chamber, that process a target substrate at the predetermined pressure;
• at least one pre-cleaning unit, disposed around the transferring chamber, that processes a target substrate at the predetermined pressure;
• and
• at least three transferring arms, disposed in the transferring chamber, that transfer a target substrate.

A processing apparatus, comprising:

• a substrate container holding table that holds a substrate container that contains a plurality of target substrates;
• a transferring chamber, disposed adjacent to the substrate container holding table, that maintains an interior thereof at a predetermined pressure;
• a processing unit, disposed around the transferring chamber, that processes a target substrate at the predetermined pressure, and that is selected from a group consisting of a pre-cleaning unit, an alumina layer depositing unit, a zirconium oxide layer depositing unit, a zirconium silicate layer depositing unit, a hafnium oxide layer depositing unit, a hafnium silicate layer depositing unit, an yttrium oxide layer depositing unit, an yttrium silicate layer depositing unit, a lanthanum oxide layer depositing unit, a lanthanum silicate layer depositing unit, an oxide layer forming unit, a nitride layer forming unit, a manganese layer depositing unit, a niobium layer depositing unit, an aluminum layer depositing unit, a molybdenum layer depositing unit, a zirconium layer depositing unit, a vanadium layer depositing unit, a cobalt layer depositing unit, a rhenium layer depositing unit, an iridium layer depositing unit, a platinum layer depositing unit, a ruthenium oxide layer depositing unit, an annealing unit, and a tungsten layer depositing unit;
• and
• at least three transferring arms, disposed in the transferring chamber, that transfer a target substrate.