Rinsing processes and equipment
AssigneeFSI International, Inc.
InventorsKurt K. Christenson, Steven L. Nelson, James R. Oikari, Jeff F. Olson, Biao Wu
Life of this patent
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Abstract
Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.
Claims44
A method of processing a microelectronic device, the method including:
- spraying a rinsing fluid onto a surface of the device in an atmosphere comprising a gaseous surface tension reducing agent, to rinse away etching agent or oxidizing agent;
- and
- drying the device, wherein at least partial drying occurs in an atmosphere comprising a surface tension reducing agent that is at least partially miscible with the rinsing fluid.
A method of processing a microelectronic device, the method including steps of:
- cleaning a surface of the device using an etching agent or an oxidizing agent;
- rinsing a surface of the device by spraying a rinsing fluid onto the surface while the surface contacts an atmosphere comprising a gaseous surface tension reducing agent;
- and
- at least partially drying the rinsed device in an atmosphere comprising a surface tension reducing agent.
A method of rinsing a microelectronic device wherein
- a flow of gaseous surface tension reducing agent is caused to contact a surface of the device;
- a flow of rinsing fluid is caused to contact the surface of the device;
- and
- the contacting steps are repeated.
A method of rinsing a microelectronic device, the method comprising the steps of:
- providing a chamber containing a turntable,
- positioning one or more devices on the turntable,
- rotating the turntable while the devices are positioned on the turntable,
- providing a surface tension reducing agent into the chamber;
- and
- rinsing a surface of the rotated device with a rinsing fluid.
A system for processing a microelectronic device, the system comprising:
- a chamber in which one or more devices can be positioned during processing;
- one or more orifices inside the chamber through which isopropyl alcohol gas is introduced into the chamber;
- one or more orifices inside the chamber through which a rinsing fluid is introduced into the chamber;
- a turntable which causes the one or more devices to rotate or move proximal to the orifices;
- and
- a surface tension reducing agent vapor generator comprising a container to contain liquid surface tension reducing agent and create a headspace in the container above the liquid;
- an orifice in the container to dispense nitrogen into mass transfer contact with the liquid to produce a vapor in the headspace comprising surface tension reducing agent in nitrogen;
- and an outlet in communication with the headspace and the spraypost and the one or more orifices for dispensing the vapor.
A method of processing a microelectronic device, the method comprising the steps of:
- cleaning a surface of the device with an etching agent or an oxidizing agent;
- rinsing etching agent or oxidizing agent from the device surface by spraying a rinsing fluid onto the surface while the surface is in contact with an atmosphere comprising a surface tension reducing agent.
Dependencies are inferred from the claim text.