Method for manufacturing semiconductor substrate
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMasaaki Yuri
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Abstract
A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer on the first semiconductor layer; and (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate, wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.
Claims4
A method for manufacturing a semiconductor substrate, comprising the steps of:
- (a) providing a support substrate;
- (b) epitaxially growing a first semiconductor layer on the support substrate;
- (c) epitaxially growing a second semiconductor layer on the first semiconductor layer;
- and
- (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate,
- wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.
Dependencies are inferred from the claim text.