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AssigneeIntegrated Materials, Inc.
InventorsRanaan Y. Zehavi, James E. Boyle
Estimating the term…
A silicon-based wafer support tower particularly useful for batch-mode thermal chemical vapor deposition. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. The surface roughness may be in the range of 250 to 2500 μm. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. Tubular silicon members are advantageously formed by extrusion from a silicon melt.
A method of chemical vapor deposition in a reactor, comprising the steps of:
4 The method of claim 3, wherein said material comprises silicon nitride.
A method of forming a silicon support fixture, comprising the steps of:
A silicon support fixture, comprising a plurality of silicon parts fixed together, configured to support a plurality of wafers, and having at least major surface portions with a surface roughness in a range between 250 and 2500 μm Ra.
A silicon wafer processing reactor for treating a silicon wafer, including:
A circularly symmetric reactor tube formed of substantially pure silicon having an interior bore sized to receive a support fixture capable of holding a plurality of silicon wafers.
A method of wafer processing, comprising the steps of:
Dependencies are inferred from the claim text.