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AssigneeSumitomo Chemical Company, Limited
InventorsToshihisa Katamine, Yasushi Iyechika, Tomoyuki Takada, Yoshihiko Tsuchida, Masaya Shimizu
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In a semiconductor manufacturing system for manufacturing compound semiconductor by MOCVD, a lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of a semiconductor substrate disposed in a reactor, a main body of the lead-in member is constituted as a hollow member to form a feed gas guide passage for conducting the feed gas in an prescribed direction and is formed with multiple orifices, and the feed gas in the feed gas guide passage is jetted from the orifices in a direction perpendicular to the prescribed direction so that the semiconductor substrate is bathed in a feed gas flow of uniform amount jetted from the lead-in member in this manner. Furthermore, a pressure differential produced between the inner side and outer side of the nozzle member enables the feed gas jetted from the nozzle member to flow over the whole surface of the substrate at a uniform flow rate. The multiple feed gases are led to the vicinity of the substrate individually and the blow gas blows the multiple feed gases toward the substrate to favorably from desired thin film crystal.
A semiconductor manufacturing system equipped with a reactor and a feed gas supply unit and capable of manufacturing compound semiconductor by an epitaxial vapor deposition process by using a nozzle unit installed in the reactor to discharge feed gas from the feed gas supply unit toward a surface of a substrate mounted in the reactor,
A semiconductor manufacturing system equipped with a feed gas supply unit and a reactor for receiving feed gas from the feed gas supply unit and forming a thin-film crystal layer on a semiconductor substrate by metalorganic chemical vapor deposition,
A method for manufacturing III-V Group compound semiconductor by introducing multiple kinds of feed gas into a reactor in which a substrate on which thin-film crystal layers are to be formed has been mounted and depositing thin-film crystal layers on the substrate by hydride vapor phase epitaxy or metalorganic chemical vapor deposition, which method is characterized in comprising the steps of leading the multiple feed gases to the vicinity of the substrate individually and using a blow gas separately led into the reactor to mix the multiple feed gases present in the vicinity of the substrate and then blow the mixed feed gases toward the substrate.
A system for manufacturing III-V Group compound semiconductor that is adapted to introduce multiple kinds of feed gas into a reactor in which a substrate has been mounted and form thin-film crystal layers on the substrate by hydride vapor phase epitaxy or metalorganic chemical vapor deposition, which system is characterized in comprising a lead-in member provided in the reactor for introducing the multiple feed gases into the reactor and leading them to the vicinity of the substrate individually and for leading a blow gas supplied from outside the reactor to the vicinity of the substrate, and a blow member provided at an outlet of the lead-in member for, after the multiple feed gases exiting the lead-in member have been mixed by the blow gas, blowing the blow gas onto the multiple feed gases to blow them toward the substrate.
Dependencies are inferred from the claim text.