Cleaning composition useful in semiconductor integrated circuit fabrication

A method of fabricating a multilevel interconnect structure, comprising:

• patterning a first metal layer over a contact hole using a photoresist and etchant;
• forming an insulating layer over the first metal layer;
• defining a via in the insulating layer over the first metal layer, resulting in organic residue on at least a portion of the via;
• and
• removing the organic residue on the via using a composition comprising about 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of an organic acid, wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups.

A method of fabricating a multilevel interconnect structure, comprising:

• patterning a first metal layer over a contact hole using a photoresist and etchant;
• forming an insulating layer over the first metal layer;
• defining a via in the insulating layer over the first metal layer, resulting in organic residue on at least a portion of the via;
• and
• removing the organic residue on the via using a composition comprising 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of ascorbic acid.

A method of fabricating a multilevel interconnect structure, comprising:

• patterning a first metal layer over a contact hole using a photoresist and etchant;
• forming an insulating layer over the first metal layer;
• defining a via in the insulating layer over the first metal layer, resulting in organic residue on at least a portion of the via;
• and
• removing the organic residue on the via using a composition comprising about 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of an organic acid having two or more carboxylic acid groups.

A method of fabricating a multilevel interconnect structure, comprising:

• patterning a first metal layer over a contact hole using a photoresist and etchant;
• forming an insulating layer over the first metal layer;
• defining a via in the insulating layer over the first metal layer, resulting in organic residue on at least a portion of the via;
• and
• removing the organic residue on the via using a composition comprising 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of citric acid.

A method of fabricating a multilevel interconnect structure, comprising:

• patterning a first metal layer over a contact hole using a photoresist and etchant;
• forming an insulating layer over the first metal layer;
• defining a via in the insulating layer over the first metal layer, resulting in organic residue on at least a portion of the via;
• and
• removing the organic residue on the via using a composition comprising about 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of citric acid, ascorbic acid or a combination thereof.

A method of fabricating a multilevel interconnect structure, comprising:

• patterning a first metal layer over a contact hole using a photoresist and etchant;
• forming an insulating layer over the first metal layer;
• defining a via in the insulating layer over the first metal layer, resulting in organic residue on at least a portion of the via;
• and
• removing the organic residue on the via using a composition comprising about 55 wt. % to about 75 wt. % water, about 0.5 wt. % to about 5.0 wt. % phosphoric acid, and 20 wt. % to 50 wt. % of an organic acid, wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups.