Cleaning composition useful in semiconductor integrated circuit fabricating

A method of fabricating a multilevel interconnect structure, comprising:

• providing an insulating layer over a first metal layer;
• defining a via in the insulating layer, resulting in residue on an exposed portion of the first metal layer;
• and
• removing the residue using a composition comprising about 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of an organic acid, wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups.

A method of fabricating a multilevel interconnect structure, comprising:

• providing an insulating layer over a first metal layer;
• defining a via in the insulating layer, resulting in residue on an exposed portion of the first metal layer;
• and
• removing the residue using a composition comprising about 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of ascorbic acid.

A method of fabricating a multilevel interconnect structure, comprising:

• providing an insulating layer over a first metal layer;
• defining a via in the insulating layer, resulting in residue on an exposed portion of the first metal layer;
• and
• removing the residue using a composition comprising about 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of an organic acid having two or more carboxylic acid groups.

A method of fabricating a multilevel interconnect structure, comprising:

• providing an insulating layer over a first metal layer;
• defining a via in the insulating layer, resulting in residue on an exposed portion of the first metal layer;
• and
• removing the residue using a composition comprising about 40 wt. % to about 85 wt. % water, about 0.01 wt. % to about 10 wt. % phosphoric acid, and 10 wt. % to 60 wt. % of citric acid, ascorbic acid or a combination thereof.

A method of fabricating a multilevel interconnect structure, comprising:

• providing an insulating layer over a first metal layer;
• defining a via in the insulating layer, resulting in residue on an exposed portion of the first metal layer;
• and
• removing the residue using a composition comprising about 55 wt. % to about 75 wt. % water, about 0.5 wt. % to about 5.0 wt. % phosphoric acid, and 20 wt. % to 50 wt. % of an organic acid, wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups.

A method of fabricating a multilevel interconnect structure, comprising:

• providing an insulating layer over a first metal layer;
• defining a via in the insulating layer, resulting in residue on an exposed portion of the first metal layer;
• and
• removing the residue using a composition comprising about 60 wt. % to about 70 wt. % water, about 2 wt. % to about 3 wt. % phosphoric acid, and 30 wt. % to 40 wt. % of an organic acid, wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups.