Aluminum nitride sintered bodies and members for semiconductor-producing apparatuses
AssigneeNGK Insulators, Ltd.
InventorsYuji Katsuda, Hideyoshi Tsuruta
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Abstract
An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in an amount of not less than 0.5 mol % and not more than 2.0 mol %. Si content of the sintered body is not more than 80 ppm and an average particle diameter of aluminum nitride grains is not more than 3 μm. The aluminum nitride sintered body hardly peels aluminum nitride grains and exhibits high resistivity of at least 108 Ω·cm even in a high temperature range of, for example, 300-500° C., as well as relatively high thermal conductivity.
Claims53
An aluminum nitride sintered body comprising aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in a amount of not less than 0.5 mol % and not more than 2.0 mol %, wherein Si content is not more than 80 ppm and an average grain diameter of aluminum nitride grains is not more than 3 μm.
Dependencies are inferred from the claim text.