Method for improving adhesion of low k materials with adjacent layer
OwnerCheng-Yuan Tsai, Anseime Cheninventors
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Abstract
The present invention provides a method for improving adhesion of low k materials with adjacent Layer. The method at least includes the following steps. First of all, the semiconductor device is provided, and a cap layer is formed on the semiconductor structure. Then, an adhesion promoter layer is formed on the cap layer by spin coating, and a polymer low dielectric constant layer is formed on the adhesion promoter layer. Next, an HMDS (Hexamethyldisilazane) film is deposited on the low dielectric constant layer, the HMDS film can provide both of inorganic and organic bonds. Finally, an etching stop layer or hardmask inorganic layer is formed on the HMDS film.
Claims18
A method for improving adhesion of low k materials with adjacent layer in a semiconductor structure of the type having a cap layer, an adhesion promoter layer, a low dielectric constant layer and an etching stop layer, wherein the improvement comprising:
- depositing an adhesion film on said low dielectric constant layer, said adhesion film both have inorganic and organic bonds.
A method for improving adhesion of low k materials with adjacent layer in a semiconductor structure, said method comprising:
- providing a semiconductor structure;
- forming a cap layer on said semiconductor structure;
- forming an adhesion promoter layer on said cap layer;
- forming a low dielectric constant layer on said adhesion promoter layer;
- depositing a HMDS film on said low dielectric constant layer, said HMDS film both have inorganic and organic bonds;
- and
- forming an etching stop layer on said HMDS film.
A method for improving adhesion of low k materials with adjacent layer in a semiconductor structure, said method comprising:
- providing a semiconductor structure;
- forming a cap layer on said semiconductor structure;
- forming a first adhesion promoter layer on said cap layer;
- forming a first polymer layer on said first adhesion promoter layer;
- depositing a first HMDS film on said polymer layer, said first HMDS film has inorganic and organic bonds;
- forming an etching stop layer on said first HMDS film;
- forming a second adhesion promoter layer on said etching stop layer;
- forming a second polymer layer on said second adhesion promoter layer;
- depositing a second HMDS film on said second polymer layer, said second HMDS film both have inorganic and organic bonds;
- and
- forming an hardmask layer on said second HMDS film.
Dependencies are inferred from the claim text.