Plasma device

34) A plasma processing method using a plasma device comprising a container, the inside of which can be internally decompressed, and part of the inside being formed of a first dielectric plate made of material capable of passing microwaves with almost no loss, a gas supply system for supplying essential source material gas so as to cause excitation of plasma inside the container, an exhaust system for expelling source material gas that has been supplied inside the container and decompressing the inside of the container, an antenna, located facing an outer surface of the first dielectric plate and comprised of a slot plate and a waveguide dielectric, for radiating microwaves, and an electrode for holding an object to be treated located inside the container, a surface of the object to be treated that is to be subject to plasma processing and a microwave radiating surface of the antenna being arranged in parallel substantially opposite to each other, and the plasma device carrying out plasma processing for the object to be treated, the power density of microwaves to be input being 1.2 W/cm2 or more.

36) A plasma device comprising:

• an electrode I inside a vacuum container, with a substrate to be subjected to processing using plasma being mounted so as to be connected to this electrodes, and
• magnetic field applying means I and II provided outside the vacuum container, for applying a magnetic field to the inside of the plasma, wherein
• at least some of a gas that has been introduced into the vacuum container is expelled through a space between the magnetic field applying-means I and II.

39) A plasma device, provided with two parallel plate type electrodes I and II inside a vacuum container, and a substrate to be subjected to processing using plasma being mounted so as to be connected to either the electrode I or the electrode II, and means for applying a magnetic field to the inside of the plasma, the electrode II comprising a central section, and an outer section connected to a high frequency power source that can be controlled independently of a high frequency power source connected to the electrode I.

45) A plasma device having an electrode provided in a vacuum container, and a substrate to be subjected to plasma processing is mounted so as to come into contact with the electrode, wherein at least some of a gas that has been introduced into the vacuum container is expelled from three or more exhaust outlets having substantially the same cross sectional area and located at the edge of the substrate at substantially axially symmetrical positions with respect to an axis vertical to the substrate surface and passing through the center of the substrate.

47) A plasma device with an exhaust space formed in direct contact with an intake port of a vacuum port provided beside of a film formation space above a substrate.