Process for the structuring of a substrate
AssigneeCarl-Zeiss-Stiftung
InventorsUwe W. Hamm, Markus Kasparek, Oliver Jacobs
Life of this patent
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Abstract
A process for the structuring of a substrate with structures in the micrometer to nanometer range that does not involve the provision of gaseous fluoro-organic compounds is described. The process is carried out by means of reactive ion etching using a mask arranged on the substrate and a plasma as well as fluorine-containing organic compounds, which fluorine-containing organic compound(s) is/are provided in the form of solid polymers. A process for the etching of a coating on a substrate or the surface of a substrate is also described.
Claims10
Process for the structuring of a substrate with structures in the micrometer to nanometer range, in particular substrates of silicon or silicon-oxygen compounds and especially silicon dioxide, by means of reactive ion etching using a mask arranged on the substrate and a plasma, as well as fluorine-containing organic compounds, characterized by the fact that the fluorine-containing organic compound(s) is/are provided in the form of solid polymers.
Process for the etching of a coating on a substrate or the surface of a substrate, in particular for etching silicon, silicon dioxide or molybdenum, by means of reactive ion etching using a plasma and fluorine-containing organic compound(s), characterized by the fact that the fluorine-containing compound(s) is/are provided in the form of solid polymers.
Dependencies are inferred from the claim text.