Silicon wafer break pattern, silicon substrate, and method of generating silicon wafer break pattern

A break pattern formed on a wafer having a crystal structure, comprising:

• through-holes formed in said wafer and formed in a direction of a scribe line of said wafer;
• and
• weak spots formed between said through-holes, respectively,
• wherein said scribe line is on a surface of said wafer and wherein said crystal structure of said wafer has first crystal planes oriented in a first direction and has second crystal planes oriented in a second direction, which is different than said first direction,
• wherein each of said through-holes comprise a first through-hole portion and a second through-hole portion disposed on opposite sides of said scribe line,
• wherein said first through-hole portion is defined by at least one inside first crystal plane of said first crystal planes, one outside first crystal plane of said first crystal planes, one second crystal plane of said second crystal planes, and one connecting surface,
• wherein said one outside first crystal plane is disposed further away from said scribe line than said one inside first crystal plane,
• wherein said one second crystal plane extends from one end of said one inside crystal plane to one end of said one outside first crystal plane,
• wherein said one connecting surface extends from said other end of said one outside first crystal plane towards said scribe line,
• wherein said second through-hole portion is defined by at least another inside first crystal plane of said first crystal planes, another outside first crystal plane of said first crystal planes, another second crystal plane of said second crystal planes, and another connecting surface,
• wherein said other outside first crystal plane is disposed further away from said scribe line than said other inside first crystal plane,
• wherein said other second crystal plane extends from one end of said other inside crystal plane to one end of said other outside first crystal plane,
• wherein said other connecting surface extends from said other end of said other outside first crystal plane towards said scribe line.

A break pattern formed on a wafer having a crystal structure, comprising:

• through-holes formed in said wafer and formed in a direction of a scribe line of said wafer;
• and
• weak spots formed between said through-holes, respectively,
• wherein said scribe line is on a surface of said wafer and wherein said crystal structure of said wafer has first crystal planes oriented in a first direction and has second crystal planes oriented in a second direction, which is different than said first direction,
• wherein each of said through-holes have a zigzag shape and are formed by:
• a pair of said first crystal planes which are separated from each other in a direction of said scribe line;
• n pairs of said second crystal planes, wherein n is an integer greater than or equal to two, wherein said second crystal planes in each of said n pairs are disposed on opposite sides of said scribe line, and wherein one of said n pairs of said second crystal planes intersects one of said pair of said first crystal planes and another of said n pairs of said second crystal planes intersects another of said pair of said first crystal planes, and
• (n−1) pairs of connecting surfaces, wherein said connecting surfaces in each of said (n−1) pairs are disposed on opposite sides of said scribe line and are disposed between adjacent pairs of said n pairs of said second crystal planes.

A method of manufacturing a break pattern on a wafer having a crystal structure, comprising:

• forming a first opening having a parallelogram-shape with a first reduced neck, wherein said first opening is formed on a first side of a scribe line and is delineated by at least a first outside long side, a first inside long side, a first short side, a second short side, and said first reduced neck,
• wherein said first inside long side and said first outside long side are respectively aligned with first crystal planes of said crystal structure and said first short side and said second short side are respectively aligned with second crystal planes of said crystal structure and wherein a length of said first inside long side is reduced by said first reduced neck;
• forming a second opening having a parallelogram-shape with a second reduced neck, wherein said second opening is formed on a second side of said scribe line and is delineated by at least a second outside long side, a second inside long side, a third short side, a fourth short side, and said second reduced neck,
• wherein said second inside long side and said second outside long side are respectively aligned with said first crystal planes and said third short side and said fourth short side are respectively aligned with said second crystal planes and wherein a length of said second inside long side is reduced by said second reduced neck,
• wherein said first reduced neck and said second reduced neck face each other across said scribe line and a gap exists between said first reduced neck and said second reduced neck;
• etching a first portion of said wafer corresponding to said first opening to produce a first through-hole portion of a through-hole;
• etching a second portion of said wafer corresponding to said second opening to produce a second through-hole portion of said through-hole;
• etching a third portion of said wafer corresponding to said gap to produce a third through-hole portion of said through-hole, wherein said third through-hole portion connects said first through-hole portion and said second through-hole portion.

A method of manufacturing a break pattern on a wafer having a crystal structure, comprising:

• forming a first parallelogram-shaped opening in which short sides of said first opening are respectively aligned with first crystal planes of said crystal structure and long sides of said first opening are respectively aligned with second crystal planes of said crystal structure;
• forming a second parallelogram-shaped opening in which short sides of said second opening are respectively aligned with said first crystal planes and long sides of said second opening are respectively aligned with said second crystal planes;
• forming a first connecting strip between said first opening and said second opening;
• wherein said first connecting strip has a first end connected to one long side of said first opening and has a second end connected to one long side of said second opening,
• wherein a first gap portion is defined between said first connecting strip and said first opening, and
• wherein a second gap portion is defined between said first connecting strip and said second opening;
• etching a first portion of said wafer corresponding to said first opening and said second opening to produce at least part of a first through-hole portion of a through-hole;
• etching a second portion of said wafer corresponding to said first gap portion to produce at least part of a second through-hole portion of said through-hole;
• and
• etching a third portion of said wafer corresponding to said second gap portion to produce at least part of a third through-hole portion of said through-hole.