Method of using silicon rich carbide as a barrier material for fluorinated materials

A method of forming interconnect structures in a semiconductor device, comprising the steps of:

• providing a semiconductor structure;
• forming at least one metal line over said semiconductor structure;
• forming a silicon-rich carbide barrier layer over said metal line and semiconductor structure;
• and
• forming a fluorinated low-k dielectric layer over said silicon-rich carbide layer;
• wherein said fluorinated low-k dielectric layer is comprised of a material selected from the group comprising fluorosilicate glass (FSG), fluorinated polyimide, amorphous fluorocarbon, polytetra-fluoroethylene (PTFE), Teflon®, and parylene-F.

A method of forming interconnect structures in a semiconductor device, comprising the steps of:

• providing a semiconductor structure;
• forming at least one dielectric layer over said semiconductor structure;
• patterning said dielectric layer to form an opening therein;
• forming a silicon-rich carbide barrier layer within said opening;
• depositing a metallization layer over the structure and filling said silicon-rich carbide barrier layer lined opening;
• and
• planarizing said metallization layer to form a planarized metal structure within said silicon-rich carbide barrier layer lined opening.

A method of forming interconnect structures in a semiconductor device, comprising the steps of:

• providing a semiconductor structure;
• forming at least one fluorinated low-k dielectric layer over said semiconductor structure;
• wherein said at least one fluorinated low-k dielectric ILD layer is comprised of a material selected from the group comprising fluorosilicate glass (FSG), fluorinated polyimide, amorphous fluorocarbon, polytetrafluoroethylene (PTFE), Teflon®, and parylene-F;
• patterning said fluorinated low-k dielectric layer to form an opening therein;
• forming a silicon-rich carbide barrier layer within said opening;
• forming a metal barrier layer over said silicon-rich carbide layer;
• depositing a metallization layer over the structure and filling said metal barrier layer/silicon-rich carbide layer lined opening;
• and
• planarizing said metallization layer to form a planarized metal structure within said silicon-rich carbide barrier layer lined opening.