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US 2002/0164869 A1Published application
Fabrication process of a semiconductor device
AssigneeTokyo Electron Limited
InventorsKaoru Maekawa, Satohiko Hoshino, Masahito Sugiura, Federica Allegretti
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Abstract
A method of fabricating a semiconductor device includes the steps of forming a first insulation film on a substrate by a spin-on process, applying a curing process to the first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds, and forming a second insulation film on the first insulation film by a spin-on process.
Claims20
A method of fabricating a semiconductor device, comprising the steps of:
- forming a first insulation film on a substrate by a spin-on process;
- applying a curing process to said first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds;
- and
- forming a second insulation film on said first insulation film by a spin-on process.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- forming a first insulation film on a substrate by a spin-on process;
- applying a curing process to said first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds;
- forming a second insulation film on said first insulation film by a spin-on process;
- patterning said second insulation film to form an opening therein;
- and
- etching said first insulation film while using said second insulation film as a mask.
3 more elements
Dependencies are inferred from the claim text.