US 2002/0164865 A1 · Semiconductor device and manufacturing method thereof

Abstract

To provide a method for manufacturing a semiconductor device, by which it is possible to form a trench or a hole with high aspect ratio on a methylsiloxane type film with low dielectric constant with causing neither via-connection failure nor short-circuit failure even when lower level interconnect is covered with etching stopper. The method comprises the processes of forming a layered film with a silicon oxide film on upper layer of a methylsiloxane type film and forming the layered film using a hard mask. When the etching stopper is etched, the silicon oxide film acts as a hard mask for the methylsiloxane type film, and transfer of faceting to the methylsiloxane type film is prevented. Thus, parasitic capacitance of multi-level interconnect can be reduced without causing via-connection failure and short failure.

Claims79

Dependent claims

A method for manufacturing a semiconductor device, comprising:

a first process for forming a methylsiloxane type film on or over a first conductor film;
a second process for forming an insulating film different from the methylsiloxane type film on the methylsiloxane type film;
a third process for forming a hard mask on the insulating film;
a fourth film for transferring a pattern on the hard mask using a resist as mask, and removing the resist;
a fifth process for partially removing layered films of the methylsiloxane type film and the insulating film using the hard mask as mask, and for exposing a part of said first conductor film;
and
a sixth process for forming a second conductor film electrically connected with said first conductor film on a recess of said layered films formed in said fifth process.

4 more elements

A method for manufacturing a semiconductor device, comprising:

a first process for forming a first methylsiloxane type film on or over a first interconnect;
a second process for forming a first insulating film different from the methylsiloxane type film on said first methylsiloxane type film;
a third process for forming a first hard mask on said first insulating film;
a fourth process for transferring a hole pattern of said first hard mask using a first resist as mask, and removing said first resist;
a fifth process for forming a second methylsiloxane type film on said first hard mask;
a sixth process for forming a second insulating film different from the methylsiloxane type film on said second methylsiloxane type film;
a seventh process for forming a second hard mask on said second insulating film;
an eighth process for transferring a trench pattern having in-plane overlapping with said hole pattern on said second hard mask using a second resist as mask, and removing said second resist;
a ninth process for forming a trench in layered films of said second methylsiloxane type film and said second insulating film using said first and said second hard masks as masks, and forming a hole in layered films of said first methylsiloxane type film and said first insulating film, and exposing a part of said first interconnect;
and
a tenth process for forming a conductor film electrically connected with said first interconnect inside said trench and said hole formed in said ninth process.

8 more elements

A method for manufacturing a semiconductor device, comprising:

a first process for forming a first methylsiloxane type film on or over a first interconnect;
a second process for forming a first insulating film different from the methylsiloxane type film on said first methylsiloxane type film;
a third process for forming a first hard mask on said first insulating film;
a fourth process for forming a second methylsiloxane type film on said first hard mask;
a fifth process for forming a second insulating film different from the methylsiloxane type film on said second methylsiloxane type film;
a sixth process for forming a second hard mask on said second insulating film;
a seventh process for transferring a trench pattern to said second hard mask using a first resist as mask, and removing said first resist;
an eighth process for transferring a hole pattern having in-plane overlapping with said trench pattern to layered films comprising said first hard mask, said second methylsiloxane type film, and said second insulating film using a second resist as mask, and removing said second resist by low-pressure oxygen plasma treatment;
a ninth process for forming a trench in layered films comprising said second methylsiloxane type film and said second insulating film using said first and said second hard masks as masks, and forming a hole in layered films of said first methylsiloxane type film and said first insulating film, and exposing a part of said first interconnect;
and
a tenth process for forming a conductor film electrically connected with the first interconnect inside said trench and said hole formed in said ninth process.

8 more elements

A method for manufacturing a semiconductor device, comprising:

a first process for forming an etching stopper on a first conductor film;
a second process for forming a first methylsiloxane type film on or over said etching stopper;
a third process for forming a first insulating film different from the methylsiloxane type film on said first methylsiloxane type film;
a fourth process for forming a first hard mask on said first insulating film;
a fifth process for transferring a hole pattern to said first hard mask using a first photoresist mask, and removing said first photoresist mask;
a sixth process for forming a second methylsiloxane type film on said first hard mask;
a seventh process for forming a second insulating film different from the methylsiloxane type film on said second methylsiloxane type film;
an eighth process for forming a second hard mask on said second insulating film;
a ninth process for transferring a trench pattern having in-plane overlapping with said hole pattern to said second hard mask using a second photoresist mask, and removing said second photoresist mask;
a tenth process for forming a trench in layered films of said second methylsiloxane type film and said second insulating film using said first and said second hard masks as masks, and forming a hole in layered films of said first methylsiloxane type film and said first insulating film;
an eleventh process for partially removing said etching stopper for exposing a part of said first conductor film and for removing said second hard mask;
and
a twelfth process for forming a second conductor film electrically connected with said first conductor film inside said trench and said hole formed in said tenth and eleventh processes.

10 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims79