Capacitor structures

A method of forming a capacitor structure, comprising:

• forming a first electrical node;
• forming a layer of metallic aluminum over the first electrical node;
• transforming an entirety of the metallic aluminum within the layer of metallic aluminum to AlN, AlON, or AlO;
• wherein the listed compounds are described in terms of chemical constituents rather than stoichiometry;
• the transformed layer being a dielectric material over the first electrical node;
• and
• forming a second electrical node that is electrically separated from the first electrical node by at least the dielectric material;
• the first electrical node, second electrical node and dielectric material together defining at least a portion of a capacitor structure.

A capacitor structure, comprising:

• a first electrical node;
• a second electrical node;
• and
• a capacitor dielectric region operatively positioned between the first and second electrical nodes, the dielectric region comprising a dielectric material which consists essentially of aluminum, oxygen and nitrogen;.