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US 2002/0164850 A1Published application
Single transistor rare earth manganite ferroelectric nonvolatile memory cell
OwnerAlfred P. Gnadingerinventor
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Abstract
A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same.
Claims22
A method of making a memory device, comprising:
- providing a substrate;
- providing a ferroelectric layer composed of a film of rare earth manganite;
- providing an interfacial oxide layer having a rare earth oxide as a component in between the substrate and the ferroelectric layer;
- and
- providing a gate electrode on the ferroelectric layer,
- wherein said rare earth manganite film has the general formula A3+MnOx, where A=Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, or Lu, and where x is between 1 and 3 inclusive.
3 more elements
A memory device comprising:
- a substrate;
- a ferroelectric layer, said layer being a film of rare earth manganite;
- and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer.
Dependencies are inferred from the claim text.