Soi transistor with polysilicon seed
AssigneeInternational Business Machines Corporation
InventorsFariborz Assaderaghi, Tze-Chiang Chen, K. Paul Muller, Edward J. Nowak, Ghavam G. Shahidi
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Abstract
Short channel effects are effectively suppressed by steep impurity concentration gradients which can be placed with improved accuracy of location and geometry while relaxing process tolerances by implanting impurities in a polysilicon seed adjacent a conduction channel of a transistor and diffusing impurities therefrom into the conduction channel. The polysilicon seed also allows the epitaxial growth of polysilicon source/drain contacts therefrom having a configuration which minimizes current density and path length therein while providing further mechanical advantages.
Claims17
A method of fabricating a transistor including steps of
- forming a polysilicon seed in contact with a conduction channel of said transistor, and
- epitaxially growing a polysilicon source/drain contact region from said polysilicon seed.
A method of fabricating a transistor including steps of
- implanting impurities in a polysilicon seed formed adjacent a conduction channel of said transistor, and
- diffusing said impurities into said conduction channel.
A semiconductor device comprising
- a polysilicon seed formed adjacent a conduction channel of a transistor, and
- a polysilicon source/drain region epitaxially grown from said polysilicon seed to form a contact.
Dependencies are inferred from the claim text.