Microelectronic piezoelectric structure and method of forming the same
AssigneeFreescale Semiconductor, Inc.
InventorsRamoothy Ramesh, Yu Wang, Jeffrey M. Finder, Kurt Eisenbeiser, Zhiyi Yu, Ravindranath Droopad
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Abstract
A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.
Claims25
A perovskite heterostructure comprising:
- a monocrystalline silicon substrate;
- a first layer of monocrystalline oxide comprising (Sr,Ba)TiO3 overlying the silicon substrate;
- a second monocrystalline layer comprising (La,Sr)CoO3 overlying the first layer;
- a third monocrystalline layer comprising Pb(Zr,Ti) O3 overlying the second monocrystalline layer;
- and
- a fourth monocrystalline layer comprising (La,Sr)CoO3 overlying the third monocrystalline layer.
A perovskite heterostructure comprising:
- a monocrystalline silicon substrate;
- a first monocrystalline layer comprising (Ba,Sr)TiO3 overlying the silicon substrate;
- a layer of silicon oxide formed underlying the first monocrystalline layer;
- a second monocrystalline layer comprising (La,Sr)CoO3 overlying the first layer;
- a first electrode electrically contacting the second monocrystalline layer;
- a third monocrystalline layer comprising Pb(Zr,Ti)O3 overlying the second monocrystalline layer;
- a fourth monocrystalline layer comprising (La,Sr)CoO3 overlying the third monocrystalline layer;
- and
- a second electrode electrically contacting the fourth monocrystalline layer.
A process for fabricating a perovskite heterostructure comprising the steps of:
- providing a silicon substrate;
- epitaxially growing a first monocrystalline layer comprising (Ba,Sr)TiO3overlying the silicon substrate;
- forming an amorphous layer of silicon oxide underlying the first monocrystalline oxide layer during the step of epitaxially growing the first monocrystalline oxide layer;
- epitaxially growing a second monocrystalline layer comprising (La,Sr)CoO3 overlying the first monocrystalline oxide layer;
- epitaxially growing a third monocrystalline layer comprising Pb(Zr,Ti)O3 overlying the second monocrystalline layer;
- and
- epitaxially growing a fourth monocrystalline layer comprising (La,Sr)CoO3 overlying the third monocrystalline layer.
A process for fabricating a perovskite heterostructure comprising the steps of:
- providing a silicon substrate;
- epitaxially growing a first monocrystalline layer comprising (Sr,Ba)TiO3overlying the silicon substrate;
- epitaxially growing a second monocrystalline layer comprising (La,Sr)CoO3 overlying the first monocrystalline oxide layer;
- epitaxially growing a third monocrystalline layer comprising Pb(Zr,Ti)O3 overlying the second monocrystalline layer;
- and
- forming a conductive layer overlying the third monocrystalline layer.
Dependencies are inferred from the claim text.