# US 2002/0164534 A1 · Method for producing metal mask and metal mask > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2002/0164534 A1 - Document ID: US20020164534A1 - Status: Published application - Kind: A1 - Application number: 10/129,877 - Filed: 2002-05-10 - Published: 2002-11-07 - Earliest claimed: 2000-09-26 - Assignees: Eastman Kodak Company - Inventors: Kiyoshi Ogawa - Web page: https://patentgrep.com/patent/US20020164534A1 ## CPC - C25D 1/08: Perforated or foraminous objects, e.g. sieves (C25D1/10 takes precedence) - C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR ## Abstract A method for manufacturing a metal mask that facilitates easy dimensional control in the manufacturing process and can manufacture multiple metal masks having high and consistent precision. A Cr film 2 having a mask pattern 2a is formed on the surface of a glass plate 1, a dry film 4 is formed on the Cr film 2, the dry film 4 is exposed from the glass plate 1 side with the Cr film 2 as a mask, a mask pattern 4a having the same shape as that of the mask pattern 2a is formed on the dry film 4, and a metal plating layer 6 is formed on the Cr film 2. The metal plating layer 6 is separated to form a metal mask 7. ## Claims ### Claim 1 A method for manufacturing a metal mask, comprising the steps of: (a) forming an electroconductive film having a mask pattern on one principle surface of a transparent plate or a transparent film; (b) forming a photosensitive film on the electroconductive film; (c) exposing said photosensitive film from side of said transparent plate or transparent film with said electroconductive film as a mask to form a mask pattern on the photosensitive film having the same shape as that of said mask pattern of the electroconductive film; (d) forming a metal plating layer on said electroconductive film; and (e) separating the metal plating layer to form the metal mask. ### Claim 2 A method for manufacturing a metal mask, comprising the steps of: (a) providing a substrate with an electroconductive film formed on one principle surface of a transparent plate or a transparent film; (b) forming a first resist film on the electroconductive film of the substrate; (c) forming a first mask pattern on the first resist film; (d) etching said electroconductive film with the resist film as a mask; (e) removing the first resist film; (f) forming a second resist film on the electroconductive film; (g) exposing the second resist film from side of said transparent plate or transparent film with said electroconductive film as a mask to form a second mask pattern on said second resist film; (h) forming a metal plating layer by electroplating on said electroconductive film; and (i) separating the metal plating layer to form the metal mask. ### Claim 3 (depends on 2) The method for manufacturing a metal mask according to claim 2 characterized in that said second resist film is a dry film. ### Claim 4 (depends on 1, 2, 3) The method for manufacturing a metal mask as in one of claims 1-3, in which the mask pattern formed on said second resist film includes an opening that narrows as the space on said electroconductive film is further from the electroconductive film. ### Claim 5 A method for manufacturing a metal mask, comprising the steps of: (a) providing a substrate with an electroconductive film formed on one principle surface of a transparent plate or a transparent film; (b) forming a first resist film on the electroconductive film of the substrate; (c) forming a first mask pattern on the first resist film; (d) etching said electroconductive film with the resist film as a mask; (e) removing the first resist film; (f) forming a metal plating layer by electroplating on said electroconductive film; and (g) separating the metal plating layer to form a metal mask having a mask pattern in the same shape as that of said first mask pattern. ### Claim 6 A method for manufacturing a metal mask, comprising the steps of: (a) providing a substrate with an electroconductive film formed on one principle surface of a dielectric plate; (b) forming a first resist film on the electroconductive film of the substrate; (c) forming a first mask pattern on the first resist film; (d) etching said electroconductive film with the resist film as a mask; (e) removing the first resist film; (f) forming a metal plating layer by electroplating on said electroconductive film; and (g) separating the metal plating layer to form a metal mask having a mask pattern in the same shape as that of said first mask pattern. ### Claim 7 (depends on 2, 3, 4, 5, 6) The method for manufacturing a metal mask as in one of claims 2-6, in which the formation of the mask pattern on said first resist film is performed using an electron beam exposure method or a laser beam exposure method. ### Claim 8 (depends on 2, 3, 4, 5, 6) The method for manufacturing a metal mask as in one of claims 2-6, in which the formation of the mask pattern on said first resist film is performed by the exposure method using a master mask. ### Claim 9 A method for manufacturing a metal mask, comprising the steps of: (a) forming an electroconductive film having a mask pattern on one principle surface of a transparent plate or a transparent film; (b) forming a metal plating layer on the electroconductive film; and (c) separating the metal plating layer to form a metal mask having a mask pattern with the same shape as that of said mask pattern. ### Claim 10 A method for manufacturing a metal mask, comprising the steps of: (a) forming an electroconductive film having a mask pattern on one principle surface of a dielectric plate; (b) forming a metal plating layer on the electroconductive film; and (c) separating the metal plating layer to form a metal mask having a mask pattern with the same shape as that of said mask pattern. ### Claim 11 (depends on 1, 2, 3, 4, 5, 6, 7, 8, 9, 10) The method for manufacturing a metal mask as in one of claims 1-10, in which said electroconductive film is a metal film that has a principle component of chromium. ### Claim 12 (depends on 1, 2, 3, 4, 5, 6, 7, 8, 9, 10) The method for manufacturing a metal mask as in one of claims 1-10, in which said electroconductive film is an ITO film. ### Claim 13 (depends on 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12) A metal mask manufactured by a manufacturing method as in one of claims 1-12. ### Claim 14 A metal mask obtained by separating a metal plating layer formed on a electroconductive film having a predetermined mask pattern formed on a dielectric plate wherein the metal mask has an opening with a tapered shape widening from the separated surface toward the opposite side and the widest opening is at side of the separated surface.