VCSEL with single lasing-reflectivity peak reflector

A method for tuning a laser comprising the steps of:

• (a) pumping an active region located in a laser cavity of the laser with pumping energy to cause the active region to generate laser light, at least a portion of the laser cavity defined by a first mirror and a second mirror, the second mirror comprising a plurality of layers of material arranged in parallel and having a reflectivity band with a peak reflectivity at a peak wavelength, the reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the peak reflectivity;
• and
• (b) adjusting the peak wavelength of the reflectivity band while pumping the active region to thereby adjust the lasing wavelength of the laser.

A computer-readable storage medium having stored thereon a plurality of instructions for tuning a laser, wherein the plurality of instructions, when executed by a processor of a computer, cause the computer to perform the steps of:

• (a) sending a signal resulting in pumping an active region located in a laser cavity of a laser, at least a portion of the laser cavity defined by a first mirror and second mirror, until laser light is emitted, the second mirror comprising a plurality of dielectric layers arranged in parallel and having a first wavelength band with reflectivity above a particular reflectivity, the first wavelength band including a first peak reflectivity at a first peak wavelength, the first reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the first peak reflectivity;
• and
• (b) sending a signal resulting in adjusting the first peak wavelength of the first wavelength band toward a particular wavelength.

A single reflectivity band reflector, comprising a plurality of layers of material arranged in parallel such that the reflector has a reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the peak reflectivity, the reflectivity band lying between and adjacent to first and second adjacent wavelength bands, each said adjacent wavelength band being at least 20 nm wide and having a maximum reflectivity, wherein each said maximum reflectivity is at least 3% less than the peak reflectivity.

A reflector comprising a stack of parallel layers of material arranged so that the reflector has a reflectivity profile comprising a primary reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the peak reflectivity, said peak reflectivity being at least 99% and being substantially greater than any other reflectivity peaks of the reflector.