Semiconductor laser device and method for manufacturing the same

A semiconductor laser element comprising on a substrate at least a first conductive type first clad layer, an active layer, a second conductive type second clad layer, a current block layer having a stripe-shaped deficient portion that extends in a direction of a resonator, a second conductive type third clad layer buried in the stripe-shaped deficient portion of the current block layer and a second conductive type protection layer provided on the third clad layer, wherein

• the active layer is constructed of at least a window region adjacent to its one end surface and an internal region having a quantum well structure,
• a peak wavelength λw of photoluminescence from the window region of the active layer has a relation of:
• λw≦λi−5 nm
• with respect to a peak wavelength λi of photoluminescence from the internal region of the active layer, and
• a half-width of the photoluminescence from the window region is narrower than a half-width of the photoluminescence from the internal region.

A semiconductor laser element fabricating method comprising the steps of:

• forming a DH wafer in which at least a- first conductive type first clad layer, an active layer and a second conductive type second clad layer are laminated on a substrate;
• forming a first dielectric film in a portion of a surface of a layer arranged on the second clad layer side of the DH wafer;
• applying an ionized atom to a side which belongs to the wafer and on which the first dielectric film is formed;
• and subjecting the DH wafer to which the ionized atom is applied to a heat treatment, whereby
• a surface of a layer arranged on the second clad layer side of the DH wafer is etched before the DH wafer is subjected to the heat treatment.