Dynamic random access memory device externally functionally equivalent to a static random access memory
AssigneeSTMicroelectronics S.r.I.
InventorGiuseppe GRASSO
Life of this patent
Estimating the term…
Abstract
A random access memory (RAM) includes at least two memory banks. Each memory bank includes an array of dynamic random access memory (DRAM) cells, and self-refresh circuits for continuously submitting the DRAM cells to a refresh operation independent of the other memory banks. A first circuit selectively accesses one of the memory banks in response to an external access request. A second circuit suspends the refresh operation in the accessed memory bank while processing the external access request, and while the refresh operations in non-selected memory banks are not suspended.
Claims9
A random access semiconductor memory, characterized by comprising:
- at least two memory banks (MB0-MB31), each memory bank including a respective two-dimensional array (2) of dynamic random access memory cells (MC), and self-refresh circuits (CNT, SA) for continuously submitting the memory cells of the respective array to a refresh operation of data stored therein independently of the other memory bank;
- first circuit means (A[0:4], DEC, B0-B31) for selectively accessing one of said at least two memory banks in response to an external request of access to a memory location belonging to said memory bank;
- second circuit means (4, 3, 6) for causing, in the accessed memory bank, a suspension of the refresh operation of the data stored in the memory cells of the respective array while serving the external request of access, the refresh operation going on in the remaining memory bank.
Dependencies are inferred from the claim text.