Molecular memory cell
AssigneeCoatue Corporation
InventorsJuri H. Krieger, Nikolay F. Yudanov
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Abstract
A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system. The active layer having a high-impedance state and a low-impedance state switches from the high-impedance state to the low-impedance state when an amplitude of a writing signal exceeds a writing threshold level, to enable writing information into the memory cell. The active layer switches from the low-impedance state to the high-impedance state when an amplitude of an erasing signal having opposite polarity with respect to the writing signal exceeds an erasing threshold level, to enable erasing information from the memory cell.
Claims52
A memory cell comprising:
- a pair of electrodes, and
- an active layer provided between the electrodes and including a molecular system, the active layer being configured to enable writing information into the memory cell when the amplitude of a writing signal exceeds a threshold level determined as a function of the duration of the writing signal.
A method of storing information in a memory cell having an active layer including a molecular system, the method comprising the steps of:
- determining a threshold level for writing information into the memory cell based on the duration of a writing signal for writing information, and
- applying the writing signal having an amplitude exceeding the threshold level to write information into the memory cell.
A switching device comprising:
- an active region having a high-impedance state and a low-impedance state and including a molecular matrix and ionic complexes distributed in the matrix, each of the ionic complexes being composed of at least a pair of ions having opposite charges;
- the active region being responsive to a switching signal for switching between the high-impedance state and the low-impedance state when the amplitude of the switching signal exceeds a threshold level determined based on the duration of the switching signal.
A method of switching a device having a high-impedance state and a low-impedance state and including a molecular matrix and ionic complexes distributed in the matrix, each of the ionic complexes being composed of at least a pair of ions having opposite charges, the method comprising the steps of:
- determining a threshold level for switching the device based on the duration of a switching signal for switching the device, and
- applying the switching signal having an amplitude exceeding the threshold level to switch the device between the high-impedance state and the low-impedance state.
A memory cell comprising:
- a pair of electrodes, and
- an active layer including a molecular system and ionic complexes distributed in the molecular system;
- the active layer being configured to enable writing information into the memory cell when the intensity of an electric field applied to the active layer exceeds a threshold value, and to enable reading information from the memory cell when the absolute value of the electric field intensity is no more than the threshold value.
A method of storing information in a memory cell having an active layer including a molecular system and ionic complexes distributed in the molecular system, the method comprising the steps of:
- applying to the active layer an electric field having intensity exceeding a threshold value to write data, and
- applying to the active layer the electric field having the absolute value of intensity no more than the threshold value to read the data.
A memory cell comprising:
- a pair of electrodes, and
- an active layer including:
- a molecular system,
- an ionic complex provided in the molecular system and including at least a pair of ions having opposite charges, and
- a trapping molecular group provided in the molecular system for trapping at least one of the ions included in the ionic complex.
A method of switching a switching device having a molecular system, and an ionic complex provided in the molecular system and including at least a pair of ions having opposite charges, the method comprising the steps of:
- applying electric field having intensity exceeding a threshold level to displace the ions included in the ionic complex, in order to switch the switching device from a high-impedance state to a low-impedance state, and
- trapping at least one of the ions when the electric field intensity is no more than the threshold value to prevent the switching device from returning to the high-impedance state.
A memory cell comprising:
- a pair of electrodes, and
- an active region including:
- a first active layer and a second active layer sandwiched between the electrodes, each of the first and second active layers including a molecular system and ionic complexes composed of at least a pair of ions, and
- a barrier layer provided between the first active layer and the second active layer for restricting movement of the ions between the first active layer and the second active layer.
A method of switching a switching device having a pair of electrodes, and a first active layer and a second active layer sandwiched between the electrodes, each of the first and second active layers including a molecular system and ionic complexes, each of the ionic complexes been composed of at least a first ion and a second ion, the method comprising the steps of:
- applying electric field having intensity exceeding a threshold value for switching the device from a high-impedance state to a low-impedance state by displacing the ions included in the ionic complex so as to place majority of the first ions into the first active layer and majority of the second ions into the second active layer, and
- providing a barrier layer between the first active layer and the second active layer to prevent the first ions from returning to the second active layer, when the electric field intensity is no more than the threshold value.
Dependencies are inferred from the claim text.