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US 2002/0163828 A1Published application
Memory device with a self-assembled polymer film and method of making the same
AssigneeCoatue Corporation
InventorsJuri H. Krieger, N. F. Yudanov
Life of this patent
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Abstract
A memory device with multi-bit memory cells and method of making the same uses self-assembly to provide polymer memory cells on the contacts to a transistor array. Employing self-assembly produces polymer memory cells at the precise locations of the contacts of the transistor array. The polymer memory cells change resistance values in response to electric current above a specified threshold value. The memory cells retain the resistivity values over time.
Claims35
A memory device, comprising:
- an addressable array of transistors;
- a dielectric layer covering the transistor array;
- a plurality of contacts to the transistor array through the dielectric layer with at least some of the contacts exposed;
- memory elements on at least some of the contacts, with the memory elements being formed only on the contacts and not on the dielectric layer;
- and
- a common electrode contacting each of the memory elements.
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A method of assembling a memory device, comprising the steps of:
- forming an array of transistors;
- covering the transistors with a dielectric layer;
- forming conductive contacts to the transistors through the dielectric layer;
- forming memory elements with multiple selectable resistance values on the conductive contacts by self-assembly;
- and
- forming a common electrode on the memory elements connecting to each of the memory elements.
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A method of forming a memory cell comprising:
- forming a first electrode;
- forming a memory element on the first electrode by self-assembly, wherein the memory element comprises a polymer that forms only on the first electrode and having multiple resistance values that are selectable by exposure of the polymer to an electric field;
- and
- forming a second electrode on the memory element.
1 more element
Dependencies are inferred from the claim text.