Semiconductor device and manufacturing method thereof
OwnerYoshihiko Toyodainventor
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Abstract
A plurality of grooves having different widths are formed on a surface of an insulating film. Interconnection constituted by a barrier metal and a Cu film is formed in a manner so as to be embedded in the respective grooves. Unevenness formed by, for example, a plurality of grooves are formed on a bottom portion of each of wide grooves having wide widths among the grooves. With this arrangement, it is possible to provide a semiconductor device and a manufacturing method thereof, which can reduce a difference in the deposition rate between the wide grooves and narrow grooves.
Claims12
A semiconductor device comprising:
- an insulating layer having a surface in which a plurality of grooves having different widths are formed;
- and
- a conductive layer formed by filling the inside of each of said grooves with at least plating,
- wherein unevenness is formed on a bottom portion of each of some grooves among said plurality of grooves.
A manufacturing method of a semiconductor device comprising:
- the steps of:
- forming a plurality of grooves having different widths on a surface of an insulating layer, and forming unevenness on a bottom surface of each of some grooves among said plurality of grooves;
- depositing a metal film on said insulating layer by plating so as to be embedded in said plurality of grooves and said unevenness;
- and
- removing said metal film by chemical mechanical polishing until at least the upper surface of said insulating layer is exposed so that said metal film is allowed to remain in said grooves and said unevenness to form a interconnection layer.
Dependencies are inferred from the claim text.