Semiconductor device and method of manufacturing the same
AssigneeSony Corporation
InventorJunichi Aoyama
Life of this patent
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Abstract
The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.
Claims40
A semiconductor device in which a second conductive layer is connected through a connection pillar onto a first conductive layer embedded in a groove formed on an insulation film, wherein:
- said connection pillar is formed on said first conductive layer to be self-aligned with respect to said first conductive layer without any usage of a growth guide.
A semiconductor device in which a second conductive layer is connected through a connection pillar onto a first conductive layer embedded in a groove formed on an insulation film, wherein:
- a growth suppression film having an opening whose width is wider than a width of said first conductive layer is formed on said insulation film and said first conductive layer, and
- said connection pillar is formed on said first conductive layer within said opening of said growth suppression film to be self-aligned with respect to said first conductive layer.
A method of manufacturing a semiconductor device, in which a second conductive layer is connected through a connection pillar onto a first conductive layer embedded in a groove formed on an insulation film, including the steps of:
- forming said first conductive layer embedded in the groove formed in said insulation film;
- and
- forming said connection pillar on said first conductive layer to be self-aligned with respect to said first conductive layer without any usage of a growth guide.
A method of manufacturing a semiconductor device in which a second conductive layer is connected through a connection pillar onto a first conductive layer embedded in a groove formed on an insulation film, comprising the steps of:
- forming said first conductive layer embedded in the groove formed on said insulation film;
- forming a growth suppression film having an opening whose width is wider than a width of said first conductive layer on said insulation film and said first conductive layer, and
- forming said connection pillar on said first conductive layer within said opening of said growth suppression film to be self-aligned with respect to said first conductive layer.
Dependencies are inferred from the claim text.