Power device with a plastic molded package and direct bonded substrate
AssigneeIXYS Corporation
InventorKang Rim Choi
Life of this patent
Estimating the term…
Abstract
A power device compatible with an SOT 227 package standard. The device includes a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer. The first conductive layer is bonded to the second dielectric layer, and the second dielectric layer is bonded to the third conductive layer. The first and third conductive layers are electrically isolated from each other. The first conductive layer has been patterned to provide at least first and second conductive blocks. A semiconductor die is bonded to the first block of the first conductive layer of the substrate. A terminal lead is coupled to the second block of the first conductive layer of the substrate.
Claims24
A power device compatible with an SOT 227 package standard, the device comprising:
- a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer, the first conductive layer being bonded to the second dielectric layer, and the second dielectric layer being bonded to the third conductive layer, the first and third conductive layers being electrically isolated from each other, the first conductive layer being patterned to provide at least first and second conductive blocks;
- a semiconductor die being bonded to the first block of the first conductive layer of the substrate;
- and
- a terminal lead coupled to the second block of the first conductive layer of the substrate.
A power device satisfying SOT-227 package standard, the device comprising:
- a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer, the first conductive layer being bonded to the second dielectric layer, and the second dielectric layer being bonded to the third conductive layer, the first and third conductive layers being electrically isolated from each other, the first conductive layer being patterned to provide at least first and second conductive blocks;
- a semiconductor die having a lower surface, the lower surface of the die bonded to the first block of the first conductive layer of the substrate;
- a terminal lead coupled to the second block of the first conductive layer of the substrate;
- and
- a plastic package having a backside and substantially enclosing the die and exposing a lower surface of the second conductive layer,
- wherein the backside of the plastic package and the lower surface of the second conductive layer define a backside of the power device,
- wherein a distance from the lower surface of the die to the lower surface of the second conductive layer is no more than about 0.060 inch.
An SOT power device, comprising:
- a direct bonded metal substrate including first and second conductive layers separated by a dielectric layer, so that the first and second conductive layers are electrically isolated;
- and
- a semiconductor die provided on the first layer of the direct bonded substrate.
An SOT power device, comprising:
- a direct aluminum bonded metal substrate including first and second aluminum layers separated by a dielectric layer, so that the first and second aluminum layers are electrically isolated;
- and
- a semiconductor die provided on the first layer of the direct bonded substrate.
A power device satisfying SOT 227 package standard, comprising:
- a substrate including a first aluminum layer, a second dielectric layer, and a third aluminum layer, the first and third conductive layers being electrically isolated from each other;
- and
- a semiconductor die being bonded to the first aluminum layer of the substrate.
A method for fabricating a power device satisfying SOT 227 package standard, the method comprising:
- providing a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer, the first conductive layer being bonded to the second dielectric layer, and the second dielectric layer being bonded to the third conductive layer, the first and third conductive layers being electrically isolated from each other;
- bonding a semiconductor die to the first conductive layer of the substrate;
- and
- enclosing the semiconductor die within a plastic package.
Dependencies are inferred from the claim text.