High frequency power device with a plastic molded package and direct bonded substrate
AssigneeIXYS Corporation
InventorKang Rim Choi
Life of this patent
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Abstract
A radio frequency power device includes a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer. The first conductive layer is bonded to the second dielectric layer, and the second dielectric layer is bonded to the third conductive layer. The first and third conductive layers are electrically isolated from each other. A semiconductor die is bonded to the first conductive layer of the substrate. A plastic package encloses and protects the semiconductor die. A plurality of leads extend outwardly from the plastic package. The leads have blade-like shapes.
Claims22
A radio frequency (RF) power device, comprising:
- a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer, the first conductive layer being bonded to the second dielectric layer, and the second dielectric layer being bonded to the third conductive layer, the first and third conductive layers being electrically isolated from each other;
- a semiconductor die being bonded to the first conductive layer of the substrate;
- a plastic package to enclose and protect the semiconductor die;
- and
- a plurality of leads extending outwardly from the plastic package, the leads having blade-like shapes.
A radio frequency (RF) power device, comprising:
- a direct copper bonded (DCB) substrate including first and second copper layers separated by a dielectric layer, so that the first and second copper layers are electrically isolated;
- a semiconductor die provided on the first copper layer of the DCB substrate;
- a plastic encapsulant to enclose the die and portions of the DCB substrate, where a backside of the second copper layer is exposed to form a backside of the power device;
- a first lead having a blade-like shape extending outwardly from a first side of the plastic encapsulant;
- and
- a second lead having a blade-like shape extending outwardly from a second side of the plastic encapsulant, the second side of the plastic encapsulant being provided at an opposing side of the first side of the plastic encapsulant.
A radio frequency (RF) power device, comprising:
- At a direct bonded substrate including first and second conductive layers separated by a dielectric layer, so that the first and second conductive layers are electrically isolated, the first conductive layer being patterned into a plurality of blocks;
- a plurality of leads being bonded to the plurality of blocks of the first conductive layer;
- a semiconductor die being bonded to one of the plurality of blocks of the first conductive layer, the semiconductor die being electrically coupled to the plurality of leads via a plurality of wires extending the semiconductor die to the plurality of the blocks of the first conductive layer;
- a plastic package to enclose the die and portions of the substrate, where a backside of the second conductive layer is exposed to be joined to a heatsink to dissipate heat generated by the power device;
- a first lead having a blade-like shape extending outwardly from a first side of the plastic package;
- and
- a second lead having a blade-like shape extending outwardly from a second side of the plastic package, the second side of the plastic package being provided at an opposing side of the first side of the plastic package.
A method for fabricating a high frequency power device, comprising:
- providing a substrate including a first conductive layer, a second dielectric layer, and a third conductive layer, the first conductive layer being bonded to the second dielectric layer, and the second dielectric layer being bonded to the third conductive layer, the first and third conductive layers being electrically isolated from each other;
- bonding a semiconductor die to the first conductive layer of the substrate;
- and
- enclosing the semiconductor die within a plastic package.
A method for fabricating a plurality of radio frequency (RF) power devices in a single process, the method comprising:
- providing an assembly boat;
- placing a plurality of substrates into the assembly boat;
- providing a lead frame over the plurality of direct bonded substrates;
- providing a plurality of semiconductor dice over the direct bonded substrates;
- and
- forming plastic encapsulation over the plurality of the substrates, the lead frame, and the plurality of semiconductor dice, wherein portions of the lead frame are extending outwardly from the plastic encapsulation.
Dependencies are inferred from the claim text.