Semiconductor high dielectric constant decoupling capacitor structures and process for fabrication
AssigneeInternational Business Machines Corporation
InventorsHoward Hao Chen, Louis L. Hsu, Li-Kong Wang
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Abstract
Apparatus and method for providing high dielectric constant decoupling capacitors for semiconductor structures. The high dielectric constant decoupling capacitor can be fabricated by depositing high dielectric constant material between adjacent conductors on the same level, between conductors in successive levels, or both, to thereby provide very large capacitance value without any area or reliability penalty.
Claims20
A semiconductor structure comprising:
- a substrate;
- two or more adjacent conductors, disposed in at least one dielectric layer formed over said substrate, wherein each pair of adjacent conductors is separated by a gap;
- and
- a first high dielectric constant material formed in the gap between two adjacent conductors.
A method for providing a high performance semiconductor structure having first and second adjacent conductors on a substrate comprising the steps of:
- forming a first conductor on the substrate;
- depositing a first high dielectric constant material adjacent to at least one side of the first conductor;
- and
- forming a second conductor adjacent to the first high dielectric constant material.
Dependencies are inferred from the claim text.