High dielectric constant materials as gate dielectrics (insulators)
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Louis L. Hsu, Carl J. Radens, Joseph F. Shepard JR.
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Abstract
A method and structure for a metal oxide semiconductor field effect transistor (MOSFET) includes patterning a gate stack (having a gate conductor layer and a gate dielectric) over a substrate and modifying the gate dielectric beneath the gate conductor, such that the gate dielectric has a central portion and modified dielectric regions adjacent the central portion. The modified dielectric regions have a lower dielectric constant than that of the gate dielectric and the central portion is shorter than the gate conductor.
Claims24
A metal oxide semiconductor field effect transistor (MOSFET) comprising:
- a substrate;
- a gate dielectric layer above said substrate, said gate dielectric including a central region and outer regions wherein said central region has a higher dielectric constant than said outer regions;
- and
- a gate conductor above said gate dielectric layer, said gate conductor covering all of said central region and at least a portion of each of said outer regions of said gate dielectric layer.
A metal oxide semiconductor field effect transistor (MOSFET) comprising:
- a substrate;
- a gate dielectric above said substrate;
- and
- a gate conductor above and aligned with said gate dielectric, said gate conductor being longer than said gate dielectric.
A method of forming a metal oxide semiconductor field effect transistor (MOSFET), said method comprising:
- forming a gate dielectric over a substrate;
- forming a gate conductor over said gate dielectric;
- patterning said gate conductor and said gate dielectric to form a gate stack;
- and
- modifying said gate dielectric beneath said gate conductor, such that said gate dielectric has a central portion, having a length less than that of said gate conductor, and modified dielectric regions adjacent said central portion.
A method of forming a metal oxide semiconductor field effect transistor (MOSFET), said method comprising:
- patterning a gate stack over a substrate, said gate stack including a gate conductor layer and a gate dielectric;
- and
- modifying said gate dielectric beneath said gate conductor, such that said gate dielectric has a central portion and modified dielectric regions adjacent said central portion, wherein said modified dielectric regions have a lower dielectric constant than that of said gate dielectric.
Dependencies are inferred from the claim text.