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US 2002/0163036 A1Published application
Semiconductor Device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsNaruhisa Miura, Toshiyuki Oishi, Yuji Abe, Kohei Sugihara
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Abstract
A field-effect transistor including a gate electrode, silicon layers and source/drain regions is formed at a surface of a silicon substrate. Sidewall insulating films formed on the opposite side surfaces of the gate electrode are provided at portions located between the gate electrode and the silicon layers with voids, respectively. A semiconductor device having a field-effect transistor capable of fast operation is formed.
Claims15
A semiconductor device comprising:
- a gate electrode formed on a surface of a semiconductor substrate with a gate insulating film therebetween;
- sidewall insulating films formed on opposite side surfaces of said gate electrode, respectively;
- and
- source/drain regions formed on one and the other of regions of said semiconductor substrate spaced from each other with said gate electrode and said sidewall insulating films therebetween, and each including a portion formed at the surface of said semiconductor substrate and a raised portion formed on the surface of said portion formed at the semiconductor substrate surface, wherein
- said sidewall insulating film is provided at its portion located between said raised portion and said gate electrode with a void.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode on a surface of a semiconductor substrate;
- forming a dummy sidewall insulating film on each of the opposite side surfaces of said gate electrode;
- forming impurity regions partially forming source/drain regions on one and the other of regions of said semiconductor substrate spaced from each other with said gate electrode and said dummy sidewall insulating films therebetween;
- forming raised portions partially forming said source/drain regions on the surfaces of the impurity regions, respectively;
- removing said dummy sidewall insulating films after forming said raised portions;
- and
- forming sidewall insulating films on the side surfaces of said gate electrode, respectively, after removing said dummy sidewall insulating films, wherein
- said step of forming said sidewall insulating film is performed to form a void in a region between said raised portion and said gate electrode by suppressing supply of a material of said sidewall insulating film to said region between said raised portion and said gate electrode.
5 more elements
Dependencies are inferred from the claim text.