Cell array region of a nor-type mask ROM device and fabricating method therefor
AssigneeSamsung Electronics Co., Ltd.
InventorWoon-Kyung Lee
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Abstract
In a cell array region of a NOR-type mask ROM device and a fabricating method therefor, following formation of a plurality of word lines parallel to one another on a semiconductor substrate, a plurality of sub-bit lines intersecting the top portion of the plurality of word lines at right angles are formed. Trench regions are formed on the semiconductor substrate exposed by the plurality of word lines and the plurality of sub-bit lines. An interlayer insulating layer is formed on the entire surface of the resulting material, and a plurality of bit lines which are parallel to one another are formed on the interlayer insulating layer.
Claims4
A cell array region of a NOR-type mask ROM device, comprising:
- a plurality of word lines formed on a semiconductor substrate parallel to one another and insulated from the semiconductor substrate;
- a plurality of sub-bit lines parallel to one another which intersect a top portion of the plurality of word lines at right angles and contact the semiconductor substrate between the word lines;
- a plurality of trench regions formed on the semiconductor substrate, the plurality of trench regions exposing the semiconductor substrate between the plurality of sub-bit lines and the plurality of word lines;
- and
- a plurality of bit lines which are arranged parallel to the sub-bit lines above every second sub-bit line.
Dependencies are inferred from the claim text.