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US 2002/0163016 A1Published application
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHiroshi Shibata
Life of this patent
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Abstract
This invention provides a liquid crystal display device having high display quality by preventing rays of light diffracted at an end part of a light shielding layer because such rays are irradiated to a semiconductor layer and invite fluctuation of TFT characteristics. To completely cut off the rays of light 117 diffracted at an end part of a third light shielding layer 108, a gate electrode 104 and a second light shielding portion 106 cover a semiconductor layer 103. In consequence, the irradiation of the rays of diffracted light can be prevented, fluctuation of TFT characteristics can be avoided and satisfactory display images can be acquired.
Claims21
A semiconductor device comprising:
- a semiconductor layer on an insulating surface;
- a first insulating film on said semiconductor layer;
- a gate electrode formed over said semiconductor layer with said first insulating film interposed therebetween;
- a second insulating film on said gate electrode;
- a first light shielding layer on said second insulating film;
- a third insulating film on said first light shielding layer;
- and
- a second light shielding layer on said third insulating film,
- wherein said first light shielding layer and said gate electrode are arranged more inward than a peripheral edge part of said second light shielding layer in such a manner as to cut off rays of light diffracted by said second light shielding layer when the rays of light are irradiated from said second light shielding layer toward said semiconductor layer.
6 more elements
A semiconductor device comprising:
- a semiconductor layer on an insulating surface;
- a first insulating film on said semiconductor layer;
- a gate electrode formed over said semiconductor layer with said first insulating film interposed therebetween;
- a second insulating film on said gate electrode;
- a first light- shielding layer on said second insulating film;
- a third insulating film on said first light shielding layer;
- and
- a second light shielding layer on said third insulating film,
- wherein said second light shielding layer and at least one of said gate electrode and said first light shielding layer are so arranged as to overlap with each other over a full region of said semiconductor layer in a pixel portion.
6 more elements
A semiconductor device including:
- a first light shielding layer on an insulating surface;
- a first insulating film over said first light shielding layer;
- a semiconductor layer on said first insulating film;
- a second insulating film on said semiconductor layer;
- a wire and a gate electrode formed on said second insulating film, wherein said gate electrode is connected to said first light shielding layer;
- a third insulating film on said wire and on said gate electrode:
- a second light shielding layer formed over said semiconductor layer with said third insulating film interposed therebetween;
- a fourth insulating film on said second light shielding layer;
- and
- a third light shielding layer on said fourth insulating film;
- wherein said second light shielding layer and said gate electrode cut off rays of light diffracted by said third light shielding layer when the rays of light are irradiated from said third light shielding layer towards said semiconductor layer.
8 more elements
A semiconductor device comprising:
- a scanning line formed over a substrate;
- a first insulating film formed over the scanning line;
- a semiconductor island formed over a first insulating film, including a source region, a drain region, and at least a first and a second channel formation regions between the source region and the drain region;
- a first and a second gate electrodes formed over the at least the first and the second channel formation regions with a gate insulating film interposed therebetween, respectively, wherein the first and the second gate electrodes are electrically connected with the scanning line;
- a second insulating film formed on the first and the second gate electrodes:
- a source and a drain electrodes formed over the second insulating film, wherein the drain electrode is connected with the drain region and covers the first gate electrode and a part of the second gate electrode with the second insulating film interposed therebetween;
- a third insulating film formed on the source and the drain electrodes;
- a light shielding layer formed on the third insulating film,
- wherein the source electrode, the drain electrode, and the first and the second gate electrodes are arranged more inward than a peripheral edge part of the light shielding layer.
6 more elements
A semiconductor device comprising:
- a semiconductor island formed over a substrate, including a source region, a drain region, and at least a first and a second channel formation regions between the source region and the drain region;
- a first and a second gate electrodes and a wire adjacent to the semiconductor island with a gate insulating film interposed therebetween;
- a first insulating film formed on the first and the second gate electrodes and the wire;
- a source and a drain electrodes formed over the first insulating film, wherein the drain electrode is connected with the drain region and covers the first gate electrode and a part of the second gate electrode with the first insulating film interposed therebetween;
- a second insulating film formed on the source and the drain electrodes;
- and
- a light shielding layer formed on the second insulating film,
- wherein the semiconductor island overlaps at least one of the source electrode, the drain electrode, the first and the second gate electrodes, and the light shielding layer,
- wherein a storage capacitor comprises the semiconductor island, the gate insulating film, and the wire.
6 more elements
Dependencies are inferred from the claim text.