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US 2002/0163012 A1Published application
Semiconductor triode device having a compound-semiconductor channel layer
AssigneeFujitsu Limited
InventorsMizuhisa Nihei, Yuu Watanabe
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Abstract
A semiconductor triode comprises a gate electrode provided on a channel layer, wherein there is interposed an insulating metal oxide layer between a top surface of the channel layer and the gate electrode.
Claims9
A semiconductor triode, comprising:
- a semiconductor layer including a channel layer;
- a first ohmic electrode supplying carriers into said channel layer;
- a second ohmic electrode collecting carriers from said channel layer;
- and
- a gate electrode controlling a flow of said carriers through said channel layer from said first ohmic electrode to said second ohmic electrode,
- said gate electrode including an insulating metal oxide film formed at an interface to a surface of said semiconductor layer.
3 more elements
Dependencies are inferred from the claim text.