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AssigneeMotorola, Inc.
InventorsRavindranath Droopad, Dirk C. Jordan, Zhiyi Yu
Estimating the term…
High quality epitaxial layers (26) of wide bandgap materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide or nitride spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The layer of wide bandgap material (26) can be used to form electronic devices such as high frequency devices or light emitting devices such as lasers and light emitting diodes.
A semiconductor structure comprising:
A semiconductor structure comprising:
A process for fabricating a semiconductor structure, comprising the steps of:
A high frequency microelectronic device comprising:
An optical microelectronic device comprising:
Dependencies are inferred from the claim text.