Semiconductor light emitting device and method for manufacturing the same

A method for manufacturing a semiconductor light emitting device comprising the steps of:

• growing a semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer and a window layer on a semiconductor substrate;
• providing a mask layer on said semiconductor laminating portion;
• etching said mask layer at a portion corresponding to a position, at which an upper electrode is formed, to expose a surface of said semiconductor laminating portion;
• carrying out a heat treatment under a hydrogen atmosphere, thereby evaporating an element that constitutes a semiconductor layer of the surface of said semiconductor laminating portion exposed from said mask layer to produce a crystalline defect;
• removing only said mask layer;
• and
• forming an upper electrode at a site at which said crystalline defect is produced on said semiconductor laminating portion surface in size greater than that of the site.

A method for manufacturing a semiconductor light emitting device comprising the steps of:

• growing a semiconductor laminating portion containing a light emitting layer forming portion having at least an n-type layer and a p-type layer and a window layer on a semiconductor substrate;
• forming a current blocking layer by changing a semiconductor layer of a surface of said semiconductor laminating portion to a different conductivity type region or an insulating region at a portion on which an upper electrode is formed, by a predetermined depth from the surface;
• and
• forming said upper electrode on the surface of said semiconductor laminating portion having said current blocking layer in size which is greater than that of said current blocking layer.