Semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKazuhisa Takagi
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Abstract
A semiconductor device has a first semiconductor layer, a second semiconductor layer and an active layer sandwiched between the first and the second semiconductor layer to emit light by the active layer when a voltage is applied across the first and the second semiconductor layer. The semiconductor device includes an anode formed on the first semiconductor layer, an insulating film formed on the anode, and a screen electrode formed on the insulating film so as to cover at least part of the anode. The second semiconductor layer is grounded and the screen electrode is electrically connected to the grounded second semiconductor layer. The screen electrode screens the anode to prevent the flow of leakage current between the first and the second semiconductor layer due to the effect of electromagnetic waves.
Claims12
A semiconductor device having an active layer, a first semiconductor layer formed on one side of said active layer and a second semiconductor layer formed on the other side of said active layer, and capable of emitting light when a voltage is applied across said first and said second semiconductor layer, said semiconductor device comprising:
- a first electrode formed on said first semiconductor layer, to which a predetermined voltage is applied;
- and
- a second electrode formed on an insulating film so as to cover at least part of said first electrode;
- wherein said second electrode is grounded.
A method of manufacturing a semiconductor device having an active layer, a first semiconductor layer formed on one side of said active layer and a second semiconductor layer formed on the other side of said active layer, and capable of emitting light when a voltage is applied across said first and said second semiconductor layer, said method comprising:
- a first step of forming said first semiconductor layer on a semiconductor substrate;
- a second step of forming said active layer on said first semiconductor layer;
- a third step of forming said second semiconductor layer on said active layer;
- a fourth step of selectively etching a laminated film consisting of said second semiconductor layer, said active layer and said first semiconductor layer in a ridge such that openings reaching said semiconductor substrate are formed on the opposite sides of said ridge;
- a fifth step of forming a first conductive film on said second semiconductor layer;
- a sixth step of forming an insulating film on said first conductive film;
- and
- a seventh step of forming a second conductive film on said insulating film so as to cover said first conductive film and to be connected through the openings to said semiconductor substrate.
Dependencies are inferred from the claim text.