Semiconductor energy detector
AssigneeHamamatsu Photonics K.K.
InventorHiroshi Arahori
Life of this patent
Estimating the term…
Abstract
A semiconductor energy detector having a region for detection and charge accumulation/transfer where a two-dimensional pixel array is formed on a surface of a semiconductor substrate on which energy rays become incident, is characterized in that the region for detection and charge accumulation/transfer comprises a plurality of transfer electrodes formed in each pixel, and an excess charge removing means arranged in correspondence with one of the transfer electrodes in each pixel.
Claims5
A semiconductor energy detector having a region for detection and charge accumulation/transfer where a two-dimensional pixel array is formed on a surface of a semiconductor substrate on which energy rays become incident,
- the region for detection and charge accumulation/transfer comprising:
- a plurality of transfer electrodes formed in each pixel, and
- excess charge removing means arranged in correspondence with one of said transfer electrodes in each pixel.
A semiconductor energy detector having a region for detection and charge accumulation/transfer where a two-dimensional pixel array is formed on a surface of a semiconductor substrate on which energy rays become incident,
- the region for detection and charge accumulation/transfer comprising:
- a plurality of transfer electrodes formed in each pixel,
- an over flow drain formed for at least one transfer electrode in each pixel, and
- a discharge electrode connected to said over flow drain.
Dependencies are inferred from the claim text.