Method for dry cleaning metal etching chamber

Abstract

In accordance with the present invention, a method is provided for dry cleaning a processing chamber. This method comprises the step of introducing a first cleaning process gas into the processing chamber. A plasma is formed from the first cleaning process gas and maintained for a first time period. Next, repeating the step of introducing the cleaning process gas, a second cleaning process gas is introduced into the processing chamber and maintained the plasma for a second time period. As a result, the present invention is capable of removing polymer built up on the processing chamber's interior surfaces to achieve a high yield and maintaining throughput of the substrates in the plasma processing system.

Dependencies are inferred from the claim text.