Photoelectric conversion device and method of manufacturing the same

A photoelectric conversion device comprising:

• a lower electrode;
• numerous crystalline semiconductor particles of one conductivity type deposited on the lower electrode;
• an insulator interposed among the crystalline semiconductor particles;
• and
• a semiconductor layer of the opposite conductivity type provided over the crystalline semiconductor particles, wherein the light-receiving surface of the insulator includes a recess formed at a position between the crystalline semiconductor particles.

A photoelectric conversion device comprising:

• a lower electrode;
• numerous crystalline semiconductor particles of one conductivity type deposited on the lower electrode;
• an insulator interposed among the crystalline semiconductor particles;
• and
• a semiconductor layer of the opposite conductivity type provided over the crystalline semiconductor particles, wherein the crystalline semiconductor particles comprise a roughed surface.

A photoelectric conversion device comprising:

• a lower electrode;
• numerous hemispherical crystalline semiconductor particles of one conductivity type deposited on the lower electrode;
• an insulator interposed among the hemispherical crystalline semiconductor particles;
• and
• a semiconductor layer of the opposite conductivity type provided over the hemispherical crystalline semiconductor particles, wherein the surfaces of the hemispherical crystalline semiconductor particles and the lower electrode make an angle of 90 degrees or more.

A method of manufacturing a photoelectric conversion device comprising the steps of:

• joining numerous hemispherical crystalline semiconductor particles of one conductivity type to a substrate having a conductive region at the surface;
• forming an insulating region among the hemispherical crystalline semiconductor particles by subjecting the conductive region at the surface of the substrate to anodic oxidation;
• and
• forming a semiconductor layer of the opposite conductivity type over the hemispherical crystalline semiconductor particles and the insulating region.