Back to results
US 2002/0162500 A1Published application
Deposition of tungsten silicide films
AssigneeApplied Materials, Inc.
InventorsSoonil Hong, Hyungsuk Alexander Yoon, Ajay Singhal
Life of this patent
Estimating the term…
Abstract
A method of forming tungsten silicide (WSix) films is provided. The tungsten silicide (WSix) film is formed by reacting a tungsten source with a silicon source. After the tungsten silicide (WSix) film is formed, it is spike annealed to reduce the resistivity of the as-deposited film. The spike annealed tungsten silicide (WSix) layer has a resistivity less than about 60 μΩ-cm.
Claims19
A method of thin film deposition, comprising:
- (a) depositing a tungsten silicide (WSix) film on a substrate;
- and
- (b) spike annealing the deposited tungsten silicide (WSix) film.
A method of forming a device, comprising:
- (a) depositing a tungsten silicide (WSix) film on a substrate;
- and
- (b) spike annealing the deposited tungsten silicide (WSix) film.
A method of thin film deposition, comprising:
- depositing a tungsten silicide (WSix) film on a substrate, wherein the tungsten silicide (WSix) film has a thickness;
- and
- spike annealing the deposited tungsten suicide (WSix) film,
- wherein
- the tungsten silicide (WSix) film is spike annealed by
- (a) positioning the substrate having the tungsten silicide (WSix) layer thereon in a process chamber;
- (b) providing a nitrogen source to the process chamber;
- and
- (c) heating the substrate to a temperature within a range of about 1000° C. to about 1100° C. at a rate of about 150° C./second to about 300° C./second, wherein the substrate is heated for a predetermined time period that varies as a function of the thickness of the deposited tungsten suicide (WSix) film.
6 more elements
Dependencies are inferred from the claim text.