Charged particle beam exposure system using aperture mask in semiconductor manufacture
AssigneeKabushiki Kaisha Toshiba
InventorsRyoichi Inanami, Shunko Magoshi, Atsushi Ando
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Abstract
A charged particle beam exposure method for shaping a charged particle beam by using an aperture mask having character apertures corresponding to the character shapes extracted from a semiconductor device pattern, the method comprises arranging the character apertures in the aperture mask, each of the character apertures having a shape corresponding to character shapes extracted from a standard cell pattern used for designing a semiconductor device, and varying the shape of the charged particle beam according to the outer shape of each of the character apertures, thereby applying the shaped charged particle beam to the character apertures.
Claims20
A charged particle beam exposure method for shaping a charged particle beam by using an aperture mask having character apertures corresponding to the character shapes extracted from a semiconductor device pattern, said method comprising:
- arranging said character apertures in said aperture mask, each of said character apertures having a shape corresponding to character shapes extracted from standard cells used for designing a semiconductor device;
- and
- varying the shape of said charged particle beam according to the outer shape of each of said character apertures, thereby applying the shaped charged particle beam to said character apertures.
A charged particle beam exposure method for shaping a charged particle beam by using an aperture mask having character apertures corresponding to character shapes extracted from a semiconductor device pattern, said method comprising:
- arranging character apertures in said aperture mask, each of said character apertures having a shape corresponding to character shapes extracted from a pattern of a combination of adjacent standard cells in a designed semiconductor device pattern used for designing a semiconductor device;
- and
- shaping said charged particle beam according to the outer shape of each of said character apertures to apply the shaped charged particle beam thereto.
A charged particle beam exposure method for transferring a plurality of aperture patterns simultaneously onto a sample by selectively applying to a charged particle beam to character apertures each having a predetermined shape, said method comprising:
- outwardly moving at least a pair of opposite sides of a design pattern by a specified distance;
- removing the overlap between patterns produced by the moving step and merging said patterns;
- dividing the patterns obtained by the merging step into a plurality of rectangles;
- and
- shaping said charged particle beam depending upon the rectangular data obtained by the dividing step;
- and applying the shaped beam to a plurality of said aperture patterns.
An aperture mask comprising:
- character apertures each having an opening shape corresponding to a shape of a character extracted from a standard cell pattern used for designing a semiconductor device,
- each of said character apertures being arranged according to respective shapes.
An aperture mask comprising:
- character apertures each having a shape corresponding to a shape of a character extracted from a pattern of a combination of neighboring standard cells in the semiconductor device pattern used for designing a semiconductor device.
A method of designing an apertures mask comprising:
- extracting a shape of a character from a pattern of a standard cell used for designing a semiconductor device;
- and
- arranging character apertures in said aperture mask according to their shapes, each of said character apertures having a shape corresponding to a shape of the extracted character.
A method of designing an apertures mask comprising:
- extracting a character shape from a pattern of a combination of adjacent standard cells used for designing a semiconductor device;
- and
- arranging character apertures in said aperture mask, each if said character apertures having a shape corresponding to a shape of the extracted character.
A method of producing exposure data used for a charged particle beam exposure data for simultaneously transferring a plurality of aperture patterns on a sample by selectively applying a charged particle beam to character apertures including periodically arranged aperture patterns and for defining the shape of said charged particle beam to be applied to said character apertures, said method comprising:
- outwardly moving at least a pair of opposite sides of a design pattern by a specified distance;
- removing the overlap between patterns produced by the moving step and merging said patterns;
- dividing said patterns obtained by the merging step into a plurality of rectangles;
- and
- providing said rectangles obtained by the dividing step as exposure data.
A computer-readable recording medium which stores a program for controlling a charged particle beam exposure system by means of a computer and for selectively applying a charged particle beam to character apertures including periodically arranged aperture patterns with predetermined shapes, thereby simultaneously transferring said aperture patterns to a sample, said program controlling said computer to execute the followings:
- outwardly moving at least a pair of opposite sides of a design pattern by a specified distance;
- removing the overlap between patterns produced by the moving step and merging said patterns;
- dividing said patterns obtained by the merging step into a plurality of rectangles;
- shaping said charged particle beam depending upon the rectangular data obtained by the dividing step;
- and applying the shaped beam to a plurality of aperture patterns.
A computer-readable recording medium which stores a program for controlling a charged particle beam exposure system by means of a computer and for selectively applying a charged particle beam to character apertures including periodically arranged aperture patterns with predetermined shapes, thereby transferring a plurality of aperture patterns to a sample, said program for producing exposure data for defining a shape of said charged particle beam to be applied to said character apertures, said program controlling said computer to execute the followings:
- outwardly moving at least a pair of opposite sides of a design pattern by a specified distance;
- removing the overlap between patterns produced by the moving step and merging said patterns;
- dividing said patterns obtained by the merging step into a plurality of rectangles;
- and
- providing the rectangles obtained by the dividing step as exposure data.
Dependencies are inferred from the claim text.