Ether, polymer, resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsSeiichiro Tachibana, Mutsuo Nakashima, Tsunehiro Nishi
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Abstract
An ether compound of formula (1) is provided wherein R1 is H or C1-6 alkyl, R2 is C1-6 alkyl, R3 is H, C1-15 acyl or C1-15 alkoxycarbonyl which may be substituted with halogen atoms, k is 0 or 1, m is from 0 to 3, and n is from 3 to 6. The ether compound is polymerized to form a polymer having improved reactivity, robustness and substrate adhesion. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV. 1
Claims8
An ether compound of the following general formula (1):
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- wherein R1 is hydrogen or a straight, branched or cyclic alkyl group of 1 to 6 carbon atoms, R2 is a straight, branched or cyclic alkyl group of 1 to 6 carbon atoms, R3 is hydrogen or an acyl or alkoxycarbonyl group of 1 to 15 carbon atoms in which some or all of the hydrogen atoms on the constituent carbon atoms may be substituted with halogen atoms, k is 0 or 1, m is an integer from 0 to 3, and n is an integer from 3 to 6.
A polymer comprising recurring units of the following general formula (1-1) or (1-2) derived from the ether compound of the above formula (1) and having a weight average molecular weight of 1,000 to 500,000,
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- wherein k, m, n, and R1 to R3 are as defined above.
Dependencies are inferred from the claim text.