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US 2002/0161148 A1Published application
Polymers, resist compositions and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsYuji Harada, Jun Hatakeyama, Jun Watanabe, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
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Abstract
A copolymer of an acrylate monomer containing fluorine at α-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
Claims9
A polymer comprising recurring units of the following formulae (1a) and (1c) or formulae (1a), (1b) and (1c):
- 18
- wherein R1, R2, R5 to R7 each are hydrogen, a fluorine atom, or a straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms,
- R3 is a fluorine atom or a straight, branched or cyclic fluorinated alkyl group of 1 to 20 carbon atoms,
- R4 and R8 each are an acid labile group, an adhesive group, hydrogen, or a straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms,
- R9a, R9b, R10a and R10b each are hydrogen, hydroxyl, a straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms, (CH2)eCO2R11 or (CH2)eC(R12)2(OR11)
- R11 is an acid labile group, an adhesive group, hydrogen, or a straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms,
- R12 is a straight, branched or cyclic fluorinated alkyl group of 1 to 20 carbon atoms,
- letters a to e are 0<a<1, 0≦b<1, 0<c<1, 0<a+b+c≦1, d=0 or 1, and 0≦e≦6.
5 more elements
Dependencies are inferred from the claim text.