Method for planarizing organosilicate layers
AssigneeApplied Materials, Inc.
InventorsMaurice Rivoire, Frederic Gaillard, Charles Lutti, Ellie Yieh
Life of this patent
Estimating the term…
Abstract
A method for planarizing an organosilicate layer is provided. The organosilicate material layer is planarized using a slurry in conjunction with a chemical mechanical polishing (CMP) process. The slurry comprises an abrasive material dispersed in a suitable solvent. The slurry preferably has a pH greater than about 9. The abrasive material preferably has an average particle size greater than about 35 nm (nanometers).
Claims29
A composition for planarizing an organosilicate layer, comprising:
- a slurry including an abrasive material dispersed in a solvent, wherein the slurry has a pH greater than about 9.
A method for planarizing an organosilicate layer, comprising:
- positioning a substrate having an organosilicate layer thereon in a polishing system;
- providing a slurry including an abrasive material dispersed in a solvent to the polishing system, wherein the slurry has a pH greater than about 9.0;
- and
- polishing the organosilicate layer using the slurry.
A method for fabricating a device, comprising:
- providing a substrate having conductive features formed thereon with an organosilicate layer deposited between and on top of the conductive features;
- positioning the substrate in a polishing system;
- providing a slurry including an abrasive material dispersed in a solvent to the polishing system, wherein the slurry has a pH greater than about 9;
- and
- polishing the organosilicate layer using the slurry.
Dependencies are inferred from the claim text.