US 2002/0160626 A1 · Siloxan polymer film on semiconductor substrate

Abstract

A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula SiαOα−1R2α−β+2(OCnH2n+1)β wherein α is an integer of 1-3, β is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

Claims14

Dependent claims

A method for forming a siloxan polymer insulation film on a semiconductor substrate by plasma treatment, comprising the steps of:

vaporizing a silicon-containing hydrocarbon compound to produce a material gas for siloxan polymer, said silicon-containing hydrocarbon having the formula SiαOα−1R2α−β+2(OCnH2n+1), wherein α is an integer of 1-3, β is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si;
introducing the material gas into a reaction chamber for plasma CYD processing wherein a semiconductor substrate is placed;
introducing an additive gas comprising an inert gas and an oxidizing gas, said oxidizing gas being used in an amount less than the material gas;
and
forming a siloxan polymer film having —SiR2O— repeating structural units on the semiconductor substrate by activating plasma polymerization reaction in the reaction chamber.

2 more elements

Dependencies are inferred from the claim text.

Siloxan polymer film on semiconductor substrate

Life of this patent

Siloxan polymer film on semiconductor substrate

Life of this patent

Abstract

Claims14