Method to fabricate thin insulating film
AssigneeSeiko Epson Corporation
InventorRamesh H. Kakkad
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Abstract
In this disclosure, we present processes of growing SiO2 films over silicon at temperatures as low as room temperature and at pressures as high as 1 atmosphere. The lower temperature oxidation was made possible by creation of oxygen atoms and radicals by adding noble gas(es) along with oxidizing gas(es) and applying RF power to create plasma. It was also possible to fabricate silicon nitride films by flowing nitrogen containing gas(es) with noble gas(es) and applying RF power to create plasma at pressures as high as one atmosphere. In addition, the above processes could also be carried out using microwave power instead of RF power to create plasma.
Claims30
A method to fabricate SiO2 film comprising a step of applying RF power in the presence of noble gas(es) and oxidizing gas(es) at total pressure in the range of 90 kPa to 110 kPa to create a plasma containing reactive oxidizing species, the reactive oxidizing species react with silicon part of the substrate to convert at least a part of silicon in to SiO2.
The method of claim 9 wherein the said RF power density in the range of 0.5 to 10 W/cm2
A method to fabricate silicon nitride film comprising a step of applying RF power in the presence of noble gas(es) and mitriding gas(es) at total pressure in the range of 90 kPa to 110 kPa to create a plasma containing reactive nitriding species, the reactive nitriding species subsequently react with silicon part of the substrate to convert at least a part of silicon in to silicon nitride.
A method to fabricate SiO2 film comprising a step of applying RF power in the presence of noble gas(es) and oxidizing gas(es) at total pressure in the range of 1 kPa to 110 kPa to create a plasma containing reactive oxidizing species, the reactive oxidizing species subsequently react with silicon part of the substrate to convert at least a part of silicon in to SiO2.
A method to fabricate silicon nitride film comprising a step of applying RF power in the presence of noble gas(es) and nitriding gas(cs) at total pressure in the range of 1 kPa to 110 kPa to create a plasma containing reactive nitriding species, the reactive nitriding species subsequently react with silicon part of the substrate to convert at least a part of silicon in to silicon nitride.
A method to fabricate an insulator film comprising a step of applying microwave power in the presence of noble gas(es) and reagent gas(es) at total pressure in the range of 1 kPa to 110 kPa to create a plasma containing reactive regent species, the reactive species subsequently react with silicon part of the substrate to convert at least a part of silicon in an insulator film.
Dependencies are inferred from the claim text.